? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t c = 25c to 150c 1700 v v cgr t j = 25c to 150c, r ge = 1m 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 12 a i c90 t c = 90c 6 a i cm t c = 25c, 1ms 36 a ssoa v ge = 15v, t vj = 125c, r g = 24 i cm = 16 a (rbsoa) clamped inductive load v ces 1350 v p c t c = 25c 75 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g ds99004a(10/08) IXBH6N170 ixbt6n170 g = gate c = collector e = emitter tab = collector v ces = 1700v i c90 = 6a v ce(sat) 3.4v to-247 (ixbh) g c e c (tab) to-268 (ixbt) g e c (tab) high voltage, high gain bimosfet tm monolithic bipolar mos transistor features z high blocking voltage z integrated anti-parallel diode z international standard packages z low conduction losses advantages z low gate drive requirement z high power density applications: z switched-mode and resonant-mode power supplies z uninterruptible power supplies (ups) z laser generator z capacitor discharge circuit z ac switches symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ce = v ge 1700 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.5 v i ces v ce = 0.8 ? v ces 10 a s v ge = 0v t j = 125 c 100 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 6a, v ge = 15v, note 1 2.84 3.40 v t j = 125 c 3.46 v
ixys reserves the right to change limits, test conditions and dimensions. IXBH6N170 ixbt6n170 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 6a, v ce = 10v, note 1 2.0 3.5 s c ies 378 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 25 pf c res 9 pf q g 17.0 nc q ge i c = 6a, v ge = 15v, v ce = 0.5 ? v ces 2.5 nc q gc 9.6 nc t d(on) 32 ns t r 59 ns t d(off) 105 ns t f 690 ns t d(on) 35 ns t r 69 ns t d(off) 100 ns t f 600 ns r thjc 1.65 c/w r thcs 0.25 c/w note 1: pulse test, t 300 s, duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixbh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain resistive switching times, t j = 125c i c = 6a, v ge = 15v v ce = 850v, r g = 24 resistive switching times, t j = 25c i c = 6a, v ge = 15v v ce = 850v, r g = 24 reverse diode symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 6a, v ge = 0v, note 1 3.0 v t rr 1.08 s i rm 12.0 a i f = 6a, v ge = 0v, -di f /dt = 100a/ s v r = 100v, v ge = 0v to-268 (ixbt) outline
? 2008 ixys corporation, all rights reserved IXBH6N170 ixbt6n170 fig. 1. output characteristics @ 25oc 0 1 2 3 4 5 6 7 8 9 10 11 12 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 2. extended output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 0 2 4 6 8 10 12 14 16 18 20 v ce - volts i c - amperes v ge = 15v 11v 7v 9v 13v fig. 3. output characteristics @ 125oc 0 2 4 6 8 10 12 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 12a i c = 6a i c = 3a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 12a t j = 25oc 3a 6a fig. 6. input admittance 0 2 4 6 8 10 12 14 16 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v ge - volts i c - amperes t j = - 40oc 25oc 125oc
ixys reserves the right to change limits, test conditions and dimensions. IXBH6N170 ixbt6n170 ixys ref: b_6n170(2n)10-09-08 fig. 7. transconductance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 2 4 6 8 10121416 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. gate charge 0 2 4 6 8 10 12 14 16 0 2 4 6 8 1012141618 q g - nanocoulombs v ge - volts v ce = 850v i c = 42a i g = 10ma fig. 11. reverse-bias safe operating area 0 2 4 6 8 10 12 14 16 18 20 22 24 26 200 400 600 800 1000 1200 1400 1600 1800 v ce - volts i c - amperes t j = 125oc r g = 25 ? dv / dt < 10v / ns fig. 10. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 12. maximum transient thermal impedance 0.1 1.0 10.0 0.0001 0.001 0.01 0.1 1 pulse width - seconds z (th)jc - oc / w fig. 8. forward voltage drop of intrinsic diode 0 2 4 6 8 10 12 14 16 18 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v f - volts i f - amperes t j = 125oc t j = 25oc
? 2008 ixys corporation, all rights reserved IXBH6N170 ixbt6n170 ixys ref: b_6n170(2n)10-09-08 fig. 14. resistive turn-on rise time vs. drain current 0 40 80 120 160 200 240 280 3456789101112 i c - amperes t r - nanoseconds r g = 24 ? v ge = 15v v ce = 850v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 0 100 200 300 400 500 600 700 0 30 60 90 120 150 180 210 240 270 300 r g - ohms t r - nanoseconds 20 30 40 50 60 70 80 90 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 850v i c = 12a, 6a fig. 16. resistive turn-off switching times vs. junction temperature 300 400 500 600 700 800 900 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 70 80 90 100 110 120 130 t d(off) - nanoseconds t f t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 850v i c = 12a i c = 6a fig. 17. resistive turn-off switching times vs. drain current 200 300 400 500 600 700 800 900 1000 1100 1200 3456789101112 i c - amperes t f - nanoseconds 50 60 70 80 90 100 110 120 130 140 150 t d(off) - nanoseconds t f t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 850v t j = 125oc, 25oc fig. 13. resistive turn-on rise time vs. junction temperature 0 40 80 120 160 200 240 280 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 24 ? v ge = 15v v ce = 850v i c = 12a i c = 6a fig. 18. resistive turn-off switching times vs. gate resistance 300 400 500 600 700 800 900 1000 1100 0 30 60 90 120 150 180 210 240 270 300 r g - ohms t f - nanoseconds 0 100 200 300 400 500 600 700 800 t d(off) - nanoseconds t f t d(off ) - - - - t j = 125oc, v ge = 15v v ce = 850v i c = 12a i c = 6a
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